SIZ910DT-T1-GE3 Datasheet
SIZ910DT-T1-GE3 Datasheet
Total Pages: 14
Size: 210.69 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ910DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V Power - Max 48W, 100W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |
