SIZ900DT-T1-GE3 Datasheet
SIZ900DT-T1-GE3 Datasheet
Total Pages: 14
Size: 204.19 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ900DT-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 24A, 28A Rds On (Max) @ Id, Vgs 7.2mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 15V Power - Max 48W, 100W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-PowerPair™ Supplier Device Package 6-PowerPair™ |
