SIZ328DT-T1-GE3 Datasheet
SIZ328DT-T1-GE3 Datasheet
Total Pages: 14
Size: 385.14 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ328DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V, 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V, 600pF @ 10V Power - Max 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-Power33 (3x3) |
