SIZ322DT-T1-GE3 Datasheet
SIZ322DT-T1-GE3 Datasheet
Total Pages: 10
Size: 334.54 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ322DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Rds On (Max) @ Id, Vgs 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 12.5V Power - Max 16.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-Power33 (3x3) |
