SISS30LDN-T1-GE3 Datasheet
SISS30LDN-T1-GE3 Datasheet
Total Pages: 9
Size: 260.41 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SISS30LDN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 55.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 40V FET Feature - Power Dissipation (Max) 4.8W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S Package / Case PowerPAK® 1212-8S |
