SIS903DN-T1-GE3 Datasheet
SIS903DN-T1-GE3 Datasheet
Total Pages: 9
Size: 243.48 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIS903DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V Power - Max 2.6W (Ta), 23W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
