SIS407ADN-T1-GE3 Datasheet
SIS407ADN-T1-GE3 Datasheet
Total Pages: 13
Size: 629.51 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIS407ADN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 168nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 5875pF @ 10V FET Feature - Power Dissipation (Max) 3.7W (Ta), 39.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
