SIRC10DP-T1-GE3 Datasheet
SIRC10DP-T1-GE3 Datasheet
Total Pages: 7
Size: 197.52 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIRC10DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1873pF @ 15V FET Feature Schottky Diode (Body) Power Dissipation (Max) 43W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
