SIR800DP-T1-GE3 Datasheet
SIR800DP-T1-GE3 Datasheet
Total Pages: 7
Size: 126.64 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIR800DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5125pF @ 10V FET Feature - Power Dissipation (Max) 5.2W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
