SIR698DP-T1-GE3 Datasheet
SIR698DP-T1-GE3 Datasheet
Total Pages: 13
Size: 322.26 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIR698DP-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 195mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V FET Feature - Power Dissipation (Max) 3.7W (Ta), 23W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
