SIHP35N60EF-GE3 Datasheet
SIHP35N60EF-GE3 Datasheet
Total Pages: 9
Size: 262.42 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHP35N60EF-GE3
|
Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2568pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
