SIHG33N65EF-GE3 Datasheet
SIHG33N65EF-GE3 Datasheet
Total Pages: 7
Size: 146.65 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHG33N65EF-GE3
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 31.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 109mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 171nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4026pF @ 100V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
