SIHB22N60S-E3 Datasheet
SIHB22N60S-E3 Datasheet
Total Pages: 7
Size: 155.41 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHB22N60S-E3
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
