SIHB21N60EF-GE3 Datasheet
SIHB21N60EF-GE3 Datasheet
Total Pages: 9
Size: 211.87 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHB21N60EF-GE3
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2030pF @ 100V FET Feature - Power Dissipation (Max) 227W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB (D²PAK) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
