SIF912EDZ-T1-E3 Datasheet
SIF912EDZ-T1-E3 Datasheet
Total Pages: 6
Size: 101.37 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIF912EDZ-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A Rds On (Max) @ Id, Vgs 19mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 2x5 Supplier Device Package PowerPAK® (2x5) |
