Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIE882DF-T1-GE3 Datasheet

SIE882DF-T1-GE3 Datasheet
Total Pages: 10
Size: 206.08 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIE882DF-T1-GE3
SIE882DF-T1-GE3 Datasheet Page 1
SIE882DF-T1-GE3 Datasheet Page 2
SIE882DF-T1-GE3 Datasheet Page 3
SIE882DF-T1-GE3 Datasheet Page 4
SIE882DF-T1-GE3 Datasheet Page 5
SIE882DF-T1-GE3 Datasheet Page 6
SIE882DF-T1-GE3 Datasheet Page 7
SIE882DF-T1-GE3 Datasheet Page 8
SIE882DF-T1-GE3 Datasheet Page 9
SIE882DF-T1-GE3 Datasheet Page 10
SIE882DF-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6400pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)