SIE864DF-T1-GE3 Datasheet
SIE864DF-T1-GE3 Datasheet
Total Pages: 7
Size: 131.69 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIE864DF-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V FET Feature - Power Dissipation (Max) 5.2W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (U) Package / Case 10-PolarPAK® (U) |
