SIB914DK-T1-GE3 Datasheet
SIB914DK-T1-GE3 Datasheet
Total Pages: 7
Size: 119.24 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIB914DK-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 113mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 125pF @ 4V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-75-6L Dual Supplier Device Package PowerPAK® SC-75-6L Dual |
