SIA936EDJ-T1-GE3 Datasheet
SIA936EDJ-T1-GE3 Datasheet
Total Pages: 9
Size: 372.08 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA936EDJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 34mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
