SIA920DJ-T1-GE3 Datasheet
SIA920DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 292.12 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA920DJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 27mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 4V Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
