SIA907EDJT-T1-GE3 Datasheet
SIA907EDJT-T1-GE3 Datasheet
Total Pages: 8
Size: 272.94 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA907EDJT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
