SIA485DJ-T1-GE3 Datasheet
SIA485DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 242.32 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA485DJ-T1-GE3
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 155pF @ 75V FET Feature - Power Dissipation (Max) 15.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
