SIA483ADJ-T1-GE3 Datasheet
SIA483ADJ-T1-GE3 Datasheet
Total Pages: 9
Size: 268.43 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA483ADJ-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V FET Feature - Power Dissipation (Max) 3.4W (Ta), 17.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
