SIA471DJ-T1-GE3 Datasheet
SIA471DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 268.28 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA471DJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.9A (Ta), 30.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27.8nC @ 10V Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
