SIA438EDJ-T1-GE3 Datasheet
SIA438EDJ-T1-GE3 Datasheet
Total Pages: 7
Size: 109.44 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA438EDJ-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V FET Feature - Power Dissipation (Max) 2.4W (Ta), 11.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
