SIA429DJT-T1-GE3 Datasheet
SIA429DJT-T1-GE3 Datasheet
Total Pages: 8
Size: 204.66 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA429DJT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 20.5mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 10V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
