SI9936DY Datasheet
SI9936DY Datasheet
Total Pages: 13
Size: 260.66 KB
NXP
This datasheet covers 1 part numbers:
SI9936DY,518
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 900mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
