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SI9933CDY-T1-E3 Datasheet

SI9933CDY-T1-E3 Datasheet
Total Pages: 9
Size: 203.43 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI9933CDY-T1-E3, SI9933CDY-T1-GE3
SI9933CDY-T1-E3 Datasheet Page 1
SI9933CDY-T1-E3 Datasheet Page 2
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SI9933CDY-T1-E3 Datasheet Page 9
SI9933CDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

58mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 10V

Power - Max

3.1W

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI9933CDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

58mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 10V

Power - Max

3.1W

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO