SI8902AEDB-T2-E1 Datasheet
SI8902AEDB-T2-E1 Datasheet
Total Pages: 11
Size: 245.9 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8902AEDB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 11A Rds On (Max) @ Id, Vgs 28mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 5.7W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UFBGA Supplier Device Package 6-Micro Foot™ (1.5x1) |
