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SI8851EDB-T2-E1 Datasheet

SI8851EDB-T2-E1 Datasheet
Total Pages: 8
Size: 191.32 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI8851EDB-T2-E1
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SI8851EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 10V

FET Feature

-

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power Micro Foot® (2.4x2)

Package / Case

30-XFBGA