SI8823EDB-T2-E1 Datasheet
SI8823EDB-T2-E1 Datasheet
Total Pages: 8
Size: 166.1 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8823EDB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 95mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 580pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-MICRO FOOT® (0.8x0.8) Package / Case 4-XFBGA |
