SI8819EDB-T2-E1 Datasheet
SI8819EDB-T2-E1 Datasheet
Total Pages: 9
Size: 161.76 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8819EDB-T2-E1
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 3.7V Rds On (Max) @ Id, Vgs 80mOhm @ 1.5A, 3.7V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 6V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-MICRO FOOT® (0.8x0.8) Package / Case 4-XFBGA |
