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SI8810EDB-T2-E1 Datasheet

SI8810EDB-T2-E1 Datasheet
Total Pages: 8
Size: 151.15 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI8810EDB-T2-E1
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SI8810EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

72mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

245pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA