SI8483DB-T2-E1 Datasheet
SI8483DB-T2-E1 Datasheet
Total Pages: 8
Size: 171.08 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8483DB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V FET Feature - Power Dissipation (Max) 2.77W (Ta), 13W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-Micro Foot™ (1.5x1) Package / Case 6-UFBGA |
