SI8467DB-T2-E1 Datasheet
SI8467DB-T2-E1 Datasheet
Total Pages: 8
Size: 123.19 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8467DB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 73mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 10V FET Feature - Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA |
