SI8429DB-T1-E1 Datasheet
SI8429DB-T1-E1 Datasheet
Total Pages: 10
Size: 237.1 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8429DB-T1-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 11.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 4V FET Feature - Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA |
