SI8425DB-T1-E1 Datasheet
SI8425DB-T1-E1 Datasheet
Total Pages: 11
Size: 250.13 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8425DB-T1-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 23mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V FET Feature - Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-WLCSP (1.6x1.6) Package / Case 4-UFBGA, WLCSP |
