SI7962DP-T1-E3 Datasheet
SI7962DP-T1-E3 Datasheet
Total Pages: 6
Size: 91.2 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI7962DP-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 7.1A Rds On (Max) @ Id, Vgs 17mOhm @ 11.1A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
