SI7738DP-T1-E3 Datasheet
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 38mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 75V FET Feature - Power Dissipation (Max) 5.4W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 38mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 75V FET Feature - Power Dissipation (Max) 5.4W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
