SI7635DP-T1-GE3 Datasheet
SI7635DP-T1-GE3 Datasheet
Total Pages: 13
Size: 318.53 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI7635DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 26A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4595pF @ 10V FET Feature - Power Dissipation (Max) 5W (Ta), 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
