SI7621DN-T1-GE3 Datasheet
SI7621DN-T1-GE3 Datasheet
Total Pages: 7
Size: 105.57 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI7621DN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V FET Feature - Power Dissipation (Max) 3.1W (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
