SI7601DN-T1-E3 Datasheet
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 19.2mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 19.2mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
