SI7530DP-T1-E3 Datasheet
SI7530DP-T1-E3 Datasheet
Total Pages: 9
Size: 120.24 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI7530DP-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3A, 3.2A Rds On (Max) @ Id, Vgs 75mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W, 1.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
