SI6562DQ-T1-GE3 Datasheet
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
