SI5999EDU-T1-GE3 Datasheet
SI5999EDU-T1-GE3 Datasheet
Total Pages: 9
Size: 163.31 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5999EDU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 59mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 496pF @ 10V Power - Max 10.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® ChipFET™ Dual Supplier Device Package PowerPAK® ChipFet Dual |
