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SI5975DC-T1-GE3 Datasheet

SI5975DC-T1-GE3 Datasheet
Total Pages: 5
Size: 111.5 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI5975DC-T1-GE3, SI5975DC-T1-E3
SI5975DC-T1-GE3 Datasheet Page 1
SI5975DC-T1-GE3 Datasheet Page 2
SI5975DC-T1-GE3 Datasheet Page 3
SI5975DC-T1-GE3 Datasheet Page 4
SI5975DC-T1-GE3 Datasheet Page 5
SI5975DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.1A

Rds On (Max) @ Id, Vgs

86mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5975DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.1A

Rds On (Max) @ Id, Vgs

86mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™