Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5908DC-T1-GE3 Datasheet

SI5908DC-T1-GE3 Datasheet
Total Pages: 10
Size: 239.44 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI5908DC-T1-GE3, SI5908DC-T1-E3
SI5908DC-T1-GE3 Datasheet Page 1
SI5908DC-T1-GE3 Datasheet Page 2
SI5908DC-T1-GE3 Datasheet Page 3
SI5908DC-T1-GE3 Datasheet Page 4
SI5908DC-T1-GE3 Datasheet Page 5
SI5908DC-T1-GE3 Datasheet Page 6
SI5908DC-T1-GE3 Datasheet Page 7
SI5908DC-T1-GE3 Datasheet Page 8
SI5908DC-T1-GE3 Datasheet Page 9
SI5908DC-T1-GE3 Datasheet Page 10
SI5908DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.4A

Rds On (Max) @ Id, Vgs

40mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5908DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.4A

Rds On (Max) @ Id, Vgs

40mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™