SI5855CDC-T1-E3 Datasheet
SI5855CDC-T1-E3 Datasheet
Total Pages: 11
Size: 198.37 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5855CDC-T1-E3
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 144mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 276pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
