SI5853CDC-T1-E3 Datasheet
SI5853CDC-T1-E3 Datasheet
Total Pages: 10
Size: 130.81 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5853CDC-T1-E3
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 104mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.5W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
