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SI5509DC-T1-GE3 Datasheet

SI5509DC-T1-GE3 Datasheet
Total Pages: 12
Size: 157.51 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI5509DC-T1-GE3, SI5509DC-T1-E3
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SI5509DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.1A, 4.8A

Rds On (Max) @ Id, Vgs

52mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

455pF @ 10V

Power - Max

4.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5509DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.1A, 4.8A

Rds On (Max) @ Id, Vgs

52mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

455pF @ 10V

Power - Max

4.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™